Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si() and Si() surfaces-Reference-Cited by-同舟云学术

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Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si() and Si() surfaces

Published:2003-06 Issue: Volume:532-535 Page:639-644
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Pan J.S.,Tok E.S.,Huan C.H.A.,Liu R.S.,Chai J.W.,Ong W.J.,Toh K.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference16 articles.

1. Refractory silicides for integrated circuits

2. Epitaxial CoSi2 and NiSi2 thin films

3. Growth and characterization of epitaxial Ni and Co silicides

4. Cobalt disilicide epitaxial growth on the silicon (111) surface

5. High-resolution photoemission study of Co/Si(111) interface formation

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Co on the H-passivated Si(001) surface: Density-functional calculations;Physica B: Condensed Matter;2018-08

2. Impact of electric fields on the Co electrodeposition onto n-Si(111):H Surfaces;Surface Science;2015-01

3. Effect of a Cu buffer layer on the structural, chemical and magnetic properties of Co layers;Journal of Magnetism and Magnetic Materials;2014-03

4. Electric field assisted electrochemical “writing” of Co nanostructures onto n-Si(111):H surfaces;Surface Science;2013-06

5. Optimal Cu buffer layer thickness for growing epitaxial Co overlayers on Si(111)7 × 7;Journal of Applied Physics;2011-10-15

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