Local structure and electronic state of a nanoscale Si island on Si()-7×7 substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference15 articles.
1. Scanning-tunneling-microscopy study of surface morphology at the initial growth stage of Si on a 7×7 superlattice surface of Si(111)
2. Influence of Surface Structure on Epitaxial Growth of Si on Si(111)-(7 × 7) Substrate
3. Growth Processes in Si/Si(111) Epitaxy Observed by Scanning Tunneling Microscopy during Epitaxy
4. Time-resolved observation of CVD-growth of silicon on Si(111) with STM
5. The initial process of molecular beam epitaxial growth of Si on Si(111)7 × 7: a model for the destruction of the 7 × 7 reconstruction
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1. Three-dimensional scanning force/tunneling spectroscopy at room temperature;Journal of Physics: Condensed Matter;2012-02-07
2. LOCAL ELECTRONIC STATES ON TWO-DIMENSIONAL NANOSCALE ISLAND OF Si AND Ge FABRICATED ON Si(111) 7 × 7 SUBSTRATE;International Journal of Nanoscience;2009-12
3. Bias-dependent scanning tunneling microscopy investigation of potassium adsorption on aSi(111)−7×7surface;Physical Review B;2009-08-21
4. Simultaneous measurement of force and tunneling current at room temperature;Applied Physics Letters;2009-04-27
5. Recovery of local density of states using scanning tunneling spectroscopy;Physical Review B;2009-01-09
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