The Co/Si( 111 ) interface formation: a temperature dependent reaction-Reference-Cited by-同舟云学术

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The Co/Si( 111 ) interface formation: a temperature dependent reaction

Published:2002-06 Issue:1-3 Volume:511 Page:303-311
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Luches P,Rota A,Valeri S,Pronin I.I,Valdaitsev D.A,Faradzhev N.S,Gomoyunova M.V

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference27 articles.

1. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures

2. Epitaxial growth of CoSi2/Si structures

3. Heteroepitaxy of metallic and semiconducting silicides on silicon

4. Co/Si(111) interface formation at room temperature

5. High-resolution photoemission study of Co/Si(111) interface formation

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature;Technical Physics;2015-10

2. DFT characterization of nanostructured germanium surfaces induced by cobalt atoms;Surface and Interface Analysis;2013-12-03

3. Interface magnetic and optical anisotropy of ultrathin Co films grown on a vicinal Si substrate;Physical Review B;2009-09-29

4. Growth of Co nanolines on self-assembled Si nanostripes;EPL (Europhysics Letters);2009-04

5. A novel selective removal process of cobalt silicide;Journal of Materials Science: Materials in Electronics;2009-01-22

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