On the vacancy formation and diffusion on the Si(111)7×7 surfaces under exposures of low oxygen pressure studied by in situ reflection electron microscopy-Reference-Cited by-同舟云学术

On the vacancy formation and diffusion on the Si(111)7×7 surfaces under exposures of low oxygen pressure studied by in situ reflection electron microscopy

Published:1987-01 Issue:1-2 Volume:191 Page:28-44
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Shimizu N.,Tanishiro Y.,Takayanagi K.,Yagi K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference15 articles.

1. Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon

2. Reflection electron microscope study of the initial stages of oxidation of Si(111)-7 × 7 surfaces

3. N. Shimizu et al., in preparation.

4. Low Voltage Electron Diffraction Study of the Oxidation and Reduction of Silicon

5. Image contrast of dislocations and atomic steps on (111) silicon surface in reflection electron microscopy

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