Oxidation of etched silicon in air at room temperature; Measurements with ultrasoft X-ray photoelectron spectroscopy (ESCA) and neutron activation analysis-Reference-Cited by-同舟云学术

Oxidation of etched silicon in air at room temperature; Measurements with ultrasoft X-ray photoelectron spectroscopy (ESCA) and neutron activation analysis

Published:1983-01 Issue:2-3 Volume:128 Page:169-175
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Mende G.,Finster J.,Flamm D.,Schulze D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference9 articles.

1. Optical Measurement of Film Growth on Silicon and Germanium Surfaces in Room Air

2. Oxidation of Si and GaAs in air at room temperature

3. Oxide Growth on Etched Silicon in Air at Room Temperature

4. Detection of Mobile Ion during the Anodic Oxidation of Silicon

5. Investigation of surfaces by means of the Zr Mζ radiation

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