STM studies of initial In growth on Si(100)2 × 1: the In ad-dimer chain and its I-V characteristics
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference24 articles.
1. Adsorption and desorption kinetics of In on Si(100)
2. Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth
3. Surface structures of Si(100)-Al phases
4. Initial stage growth of In and A1 on a single-domain Si(001)2 × 1 surface
5. Evolution of the Si(100)‐2×2‐In reconstruction
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2. Non-Arrhenius temperature dependence of the island density of one-dimensional Al chains on Si(100): A kinetic Monte Carlo study;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-03
3. Influence of C-defect at Si(001) surface on the adsorption of Al, Ag and Pb atoms;Applied Surface Science;2014-06
4. Emergence of state at Fermi level due to the formation of In-Sn heterodimers on Si(100)-2×1;Physical Review B;2013-11-07
5. Structural and electronic properties of chain-like structures formed by mixed PbAl dimers on Si(001) — Computational DFT study;Surface Science;2013-02
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