Conduction band structure of the III–VI layer compound GaSe studied with inverse photoemission
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference11 articles.
1. Optical properties of GaSe andGaSxSe1−xmixed crystals
2. Experimental band structure of GaSe obtained by angular resolved photoemission
3. A high-resolution X-ray photoemission study of the total valence-band densities of states of GaSe and BiI3
4. A lamellar III–VI semiconductor compound (GaSe) investigated by scanning tunneling microscopy
5. Momentum-resolved inverse photoemission
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