Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy

Published:1999-02 Issue:3 Volume:421 Page:377-385
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Foxon C.T,Cheng T.S,Novikov S.V,Jeffs N.J,Hughes O.H,Melnik Yu.V,Nikolaev A.E,Dmitriev V.A

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference34 articles.

1. Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

2. Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction

3. Determination of wurtzite GaN lattice polarity based on surface reconstruction

4. Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures

5. Reconstructions of theGaN(0001¯)Surface

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3. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09

4. A theoretical comparative study of the surfactant effect of Sb and Bi on GaN growth;Journal of Crystal Growth;2007-05

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