Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing-Reference-Cited by-同舟云学术

Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing

Published:1999-01 Issue:2-3 Volume:419 Page:291-302
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Setzer C.,Platen J.,Ranke W.,Jacobi K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference33 articles.

1. Reconstruction of the GaAs (311)Asurface

2. Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces

3. Semiconductor quantum-wire structures directly grown on high-index surfaces

4. Optical properties of a high-quality (311)-oriented GaAs/Al0.33Ga0.67As single quantum well

5. Molecular-beam epitaxial GaAs/AlAs superlattices in the (311) orientation

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2. Comparison of MnAs layers on GaAs(113) surfaces grown by means of solid-phase epitaxy and conventional molecular-beam epitaxy;Physical Review B;2009-07-28

3. The growth of GaAs and InAs dots on etched mesas: The effect of substrate temperature on mesa profile and surface morphology on dot distribution;Journal of Crystal Growth;2009-07

4. Shape, size, and number density of InAs quantum dots grown on the GaAs(1¯1¯3¯)B surface at various temperatures;Physical Review B;2003-01-16

5. GaAs(311) templates for molecular beam epitaxy growth: surface morphologies and reconstruction;Applied Physics Letters;2002-10-14