Ge islands on Si(111) at coverages near the transition from two-dimensional to three-dimensional growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference34 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Effect of strain on surface morphology in highly strained InGaAs films
3. Conductance oscillations in Ge/Si heterostructures containing quantum dots
4. Self-Organization in Growth of Quantum Dot Superlattices
5. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
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1. Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface;Nanomaterials;2023-01-04
2. Dynamical evolution of Ge quantum dots on Si(111): From island formation to high temperature decay;Aggregate;2022-04-22
3. Comparison of the Growth Processes of Germanium Quantum Dots on the Si(100) and Si(111) Surfaces;Russian Physics Journal;2018-03
4. Comparative analysis of germanium–silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces;Nanotechnology;2018-01-05
5. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures;Advances in Semiconductor Nanostructures;2017
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