Interfacial stability and misfit dislocation formation in InAs/GaAs(110) heteroepitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference18 articles.
1. Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4)
2. Island Scaling in Strained Heteroepitaxy: InAs/GaAs(001)
3. The morphology and asymmetric strain relief behaviour of InAs films on GaAs (110) grown by molecular beam epitaxy
4. Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs/GaAs(110) Heteroepitaxy
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