A field-effect approach to directly profiling the localized states in monolayer MoS2-Reference-Cited by-同舟云学术

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A field-effect approach to directly profiling the localized states in monolayer MoS2

Published:2019-08 Issue:15 Volume:64 Page:1049-1055
ISSN:2095-9273
Container-title:Science Bulletin
language:en
Short-container-title:Science Bulletin

Author:

Wu Hao,Liu Yuan,Deng Zeyu,Cheng Hung-Chieh,Li Dehui,Guo Jian,He Qiyuan,Yang Sen,Ding Mengning,Huang Yun-Chiao,Wang Chen,Huang Yu,Duan Xiangfeng

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference54 articles.

1. Mobility engineering and a metal-insulator transition in monolayer MoS2;Radisavljevic;Nat Mater,2013

2. Superconducting dome in a gate-tuned band insulator;Ye;Science,2012

3. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform;Cui;Nat Nanotechnol,2015

4. Atomically thin MoS2: a new direct-gap semiconductor;Mak;Phys Rev Lett,2010

5. Emerging photoluminescence in monolayer MoS2;Splendiani;Nano Lett,2010

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4. Two‐Dimensional MoS 2 for Li−S Batteries: Structural Design and Electronic Modulation;ChemSusChem;2019-12-12

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