Monolayer MoS 2 and WSe 2 Double Gate Field Effect Transistor as Super Nernst pH sensor and Nanobiosensor-Reference-Cited by-同舟云学术

Monolayer MoS 2 and WSe 2 Double Gate Field Effect Transistor as Super Nernst pH sensor and Nanobiosensor

Published:2016-12 Issue: Volume:11 Page:45-51
ISSN:2214-1804
Container-title:Sensing and Bio-Sensing Research
language:en
Short-container-title:Sensing and Bio-Sensing Research

Author:

Shadman Abir,Rahman Ehsanur,Khosru Quazi D.M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Signal Processing,Electronic, Optical and Magnetic Materials,Biotechnology

Reference19 articles.

1. Beating the Nernst limit of 59mV/pH with double-gated nano-scale field-effect transistors and its applications to ultra-sensitive DNA biosensors;Go,2010

2. Dual-gate organic field-effect transistors as potentiometrie sensors in aqueous solution;Spijkman;Adv. Funct. Mater.,2010

3. Can 2D-nanocrystals extend the lifetime of floating-gate transistor based nonvolatile memory?;Cao;IEEE Trans. Electron Devices,2014

4. 2D electronics: graphene and beyond;Cao,2013

5. A compact current-voltage model for 2D semiconductor based field-effect transistors considering interface traps, mobility degradation, and inefficient doping effect;Cao;IEEE Trans. Electron Devices,2014

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sensitivity Enhancement of TMD MOSFET-Based Biosensor by Modeling and Optimization of Back Gate Parameters;2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID);2024-01-06

2. Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-12-12

3. Investigation of the effects of trap-assisted tunneling and temperature variations on the sensitivity metrics of a tunnel FET biosensor;Micro and Nanostructures;2023-12

4. Double Gate JLT Based New TIGFET for Dynamic C²MOS Application;2023 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS);2023-11-19

5. Material processing, performance and reliability of MoS2 field effect transistor (FET) technology- A critical review;Materials Science in Semiconductor Processing;2023-06