GeHx (x=0–3) and GenHx (n=2–7) in flash pyrolysis of GeH4
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference33 articles.
1. Low Pressure Chemical Vapor Deposition of Si1 − x Ge x Films Using Si2 H 6 and GeH4 Source Gases
2. Growth processes in the initial stage of Ge films on (811)Si surfaces by GeH4source molecular beam epitaxy
3. Supersonic molecular beam studies of the dissociative chemisorption of GeH4 and Ge2H6 on the Ge(100) and Ge(111) surfaces
4. Desorption rate of surface hydrogen in SiGe gas-source molecular beam epitaxy using Si2H6 and GeH4
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