Threshold displacement energy of amorphous SiO2: A molecular dynamics study-Reference-Cited by-同舟云学术

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Threshold displacement energy of amorphous SiO2: A molecular dynamics study

Published:2023-12 Issue: Volume:621 Page:122633
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Jiao Yuan-Bo,Wei Ya-Dong,Li Wei-Qi,Cui Xiu-Hai,Liu Zhong-Li,Yang Jian-Qun,Li Xing-Ji

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Current and future challenges in radiation effects on CMOS electronics;Dodd;IEEE Trans. Nucl. Sci.,2010

2. Evolution of total ionizing dose effects in MOS devices with Moore's law scaling;Fleetwood;IEEE Trans. Nucl. Sci.,2018

3. Radiation effects in MOS oxides;Schwank;IEEE Trans. Nucl. Sci.,2008

4. Combined radiation effects of protons and electrons on NPN transistors;Li;IEEE Trans. Nucl. Sci.,2010

5. Simultaneous and sequential radiation effects on NPN transistors induced by protons and electrons;Li;IEEE Trans. Nucl. Sci.,2012

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Normalization Indicator of Ion-Induced Radiation Damage in Power VDMOS Transistors;IEEE Transactions on Nuclear Science;2024-08

2. Analysis of Displacement Damage Induced by Silicon-Ion Irradiation in SiC MOSFETs;IEEE Transactions on Nuclear Science;2024-07

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