Ultrafast phase change speed and high thermal stability of scandium doped SnSb4 thin film for PCRAM applications-Reference-Cited by-同舟云学术

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Ultrafast phase change speed and high thermal stability of scandium doped SnSb4 thin film for PCRAM applications

Published:2023-08 Issue: Volume:613 Page:122395
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Liu Ruirui,Li Anding,Xu Zhehao,Yuan Yukang,Xu jiayue,Zhai Jiwei,Song Sannian,Song Zhitang,Zhou Xiao,Zhang Hongrui,Song Jun

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Phase change materials in non-volatile storage;Ielmini;Mater. Today,2011

2. Nitrogen-doped Sb-rich Si–Sb–Te phase-change material for high-performance phase-change memory;Zhou;Acta Mater.,2013

3. The changing phase of data storage;Simpson;Nat. Nanotechnol.,2019

4. Phase-change materials for rewriteable data storage;Wuttig;Nat. Mater.,2007

5. Enhanced performance of phase change memory by grain size reduction;Xue;J. Mater. Chem. C,2022

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multilayer Ge₈Sb₉₂/Ge₂Sb₂Te₅ thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory;Journal of Physics D: Applied Physics;2024-08-09

2. Nonvolatile Memristive Materials and Physical Modeling for In‐Memory and In‐Sensor Computing;Small Science;2024-01-22

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