Investigation of the photovoltaic performance of the polycrystalline silicon p–n junction by a photothermal measurement-Reference-Cited by-同舟云学术

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Investigation of the photovoltaic performance of the polycrystalline silicon p–n junction by a photothermal measurement

Published:2012-09 Issue:17 Volume:358 Page:2206-2208
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Fukuyama Atsuhiko,Ishibashi Daisuke,Sato Yohei,Sakai Kentaro,Suzuki Hidetoshi,Nishioka Kensuke,Ikari Tetsuo

Funder

Inamori Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. 2nd World Conference on Photovoltaic Energy Conversion, Vienna, Austria;Warta,1998

2. Analysis of Electrical Properties of Grain Boundaries in Polycrystalline Silicon Solar Cell Using Laser Beam Induced Current

3. Proc. of 35th IEEE Photovoltaic Specialists Conference;Kojima,2010

4. Effect of hydrogen plasma treatment on grain boundaries in polycrystalline silicon solar cell evaluated by laser-beam-induced current

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1. The transient analysis of latch-up in CMOS transmission gate induced by laser;Microelectronics Reliability;2014-12

2. Determination of the Interface States in Amorphous/Crystalline Silicon Using Surface Photovoltage Spectroscopy;IEEE Electron Device Letters;2013-09

3. The Amorphous/Crystalline Silicon Interface Research of HIT Solar Cells by Simulation;Advanced Materials Research;2013-09

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