The mechanism of memory and threshold switching in (GeTe4)100−x(As2Se3)x glasses-Reference-Cited by-同舟云学术

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The mechanism of memory and threshold switching in (GeTe4)100−x(As2Se3)x glasses

Published:2016-11 Issue: Volume:452 Page:210-219
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Pumlianmunga ,Venkatesh R.,Gopal E.S.R.,Ramesh K.

Funder

Department of Science & Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference52 articles.

1. Self-structured conductive filament nanoheater for chalcogenide phase transition;You;ACS Nano,2015

2. Reversible electrical switching phenomena in disordered structures;Ovshinsky;Phys. Rev. Lett.,1968

3. Reversible switching in phase change materials;Welnic;Mater. Today,2008

4. Projected phase-change memory devices;Sebastian;Nat. Commun.,2015

5. Phase change memory technology;Burr;J. Vac. Sci. Technol. B,2010

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