Evolution of structural disorder in amorphous GeSeS thin films by thickness variation-Reference-Cited by-同舟云学术

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Evolution of structural disorder in amorphous GeSeS thin films by thickness variation

Published:2016-10 Issue: Volume:450 Page:135-140
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Kumar R.T. Ananth,Qamhieh Naser N.,Mahmoud Saleh T.,Lekha P. Chithra,Jeyadheepan K.,Sanjeeviraja C.,Padiyan D. Pathinettam

Funder

University Grants Commission

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Comparison of memory switching operation in a number of amorphous chalcogenide systems

2. Composition tunable memory and threshold switching in Al20AsxTe80−x semiconducting glasses

3. Chalcogenide glasses Ge–Sn–Se, Ge–Se–Te, and Ge–Sn–Se–Te for infrared optical fibers

4. GeSe/GeS nanomultilayers prepared by pulsed laser deposition

5. Raman scattering and photodarkening of amorphous Ge1−XSX (0⩽X⩽0.62) films

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1. Ultrafast and thermally stable ternary Ge0.33SexSy ovonic threshold switching selector using magnetron sputtering;Journal of Alloys and Compounds;2024-02

2. Thermal annealing induced modification in linear and nonlinear optical properties of Ag/Ge20Se50S30 bilayer film;Optical Materials;2024-02

3. Biaxial strain engineering of the electronic and optical properties of Ge2SeS monolayer: Promising for optoelectronic applications;Computational Condensed Matter;2022-09

4. Electronic structure, optical and thermoelectric properties of Ge2SeS monolayer via first-principles study;Physica E: Low-dimensional Systems and Nanostructures;2022-02

5. Effect of thermal annealing on the optical properties of Ge20Se65S15 thin films;Indian Journal of Physics;2020-07-02

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