The influence of local Si C bonding density on the photoluminescence of Si-QDs upon thermal annealing the hydrogenated amorphous Si-rich silicon carbide thin films-Reference-Cited by-同舟云学术

The influence of local Si C bonding density on the photoluminescence of Si-QDs upon thermal annealing the hydrogenated amorphous Si-rich silicon carbide thin films

Published:2017-05 Issue: Volume:463 Page:50-55
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Wen Guozhi^ORCID,Fan Jijun,Li Xianghu,Liu Yuanyuan

Funder

Hubei Provincial Department of Education

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Identification and control of the origin of photoluminescence from silicon quantum dots

3. Carbon nanotubes coated with diamond nanocrystals and silicon carbide by hot-filament chemical vapor deposition below 200 °C substrate temperature

4. Synthesis of silicon quantum dot buried SiOxfilms with controlled luminescent properties for solid-state lighting

5. Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Elevated temperature tribological properties of a-C:Si films sputtered from SiC target in the presence of C2H2 gas;Materials Today Communications;2024-03

2. Opto-electrical properties of amorphous silicon carbide thin films adjustably prepared by magnetron sputtering at room temperature;Applied Surface Science;2023-09

3. Effect of Copper Nanoparticles on the Optical Enhancement and the Electrical Performance of Silicon Nanowires-Based Schottky Diode;Silicon;2023-06-30

4. Elevated Temperature Tribological Properties of A-C:Si Films Sputtered from Sic Target in the Presence of C2h2 Gas;2023

5. Influence of the synthesis temperature and silicon concentration on the properties of Si doped MWCNT;Diamond and Related Materials;2020-04