Recombination efficacy in a-Si:H p-i-n devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Quality factor ina‐Si:Hnipandpindiodes
2. Carrier recombination and differential diode quality factors in the dark forward bias current-voltage characteristics of a‐Si:H solar cells
3. Spatial effects on ideality factor of amorphous siliconpindiodes
4. Defect-pool model and the hydrogen density of states in hydrogenated amorphous silicon
5. Evidences of the defect pool model in the dark current-voltage characteristics of hydrogenated amorphous silicon based p-i-n devices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of μc-Si:H tunnel recombination junction on the performance of a-Si:H/μc-Si:H tandem solar cell;Optik;2017-06
2. Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools;Journal of Applied Physics;2017-05-14
3. Determination of defect density of state distribution of amorphous silicon solar cells by temperature derivative capacitance-frequency measurement;Journal of Applied Physics;2014-01-21
4. Defects characterization in p-i-n a-Si:H photodiode i-layer;Journal of Non-Crystalline Solids;2013-03
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