Temperature dependence of luminescence decay in Sn-doped silica-Reference-Cited by-同舟云学术

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Temperature dependence of luminescence decay in Sn-doped silica

Published:2005-07 Issue:21-23 Volume:351 Page:1937-1940
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Cannizzo A.,Agnello S.,Cannas M.,Chiodini N.,Leone M.,Paleari A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Mechanisms responsible for the ultraviolet photosensitivity ofSnO2-doped silica

2. Photorefractivity in Nanostructured Tin-Silicate Glass Ceramics: A Radiation-Induced Nanocluster Size Effect

3. Isoelectronic series of twofold coordinated Si, Ge, and Sn atoms in glassy SiO2: a luminescence study

4. Photoluminescence of Sn-doped SiO2 excited by synchrotron radiation

5. Strong visible electroluminescence from Ge- and Sn-implanted silicon dioxide layers

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural Evolution and Photoluminescence of SiO2 Layers with Sn Nanoclusters Formed by Ion Implantation;Journal of Nanomaterials;2019-03-26

2. Photoluminescence of Se-related oxygen deficient center in ion-implanted silica films;Journal of Luminescence;2013-11

3. Irradiation induced germanium lone pair centers in Ge-doped sol–gel SiO2: Luminescence lifetime and temperature dependence;Journal of Luminescence;2010-10

4. Luminescence and absorption spectroscopy of Sn-related impurity centers in silica;Journal of Non-Crystalline Solids;2006-07

5. β-Band Photoluminescence and Sn-E' Center Generation from Twofold-Coordinated Sn Centers in SiO2Glasses Produced via Sol–Gel Method;Japanese Journal of Applied Physics;2006-06-08

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