Electrical response to uniaxial tensile strain of a-Si:H TFTs fabricated on polyimide foils-Reference-Cited by-同舟云学术

Electrical response to uniaxial tensile strain of a-Si:H TFTs fabricated on polyimide foils

Published:2008-05 Issue:19-25 Volume:354 Page:2627-2631
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Gleskova Helena,Wagner Sigurd

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference18 articles.

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2. Strain dependence ofp‐i‐nhydrogenated amorphous silicon junctions

3. Orientation-dependent strain tolerance of amorphous silicon transistors and pixel circuits for elastic organic light-emitting diode displays

4. Electron mobility in amorphous silicon thin-film transistors under compressive strain

5. Electrical response of amorphous silicon thin-film transistors under mechanical strain

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