Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistors-Reference-Cited by-同舟云学术

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Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistors

Published:2006-06 Issue:9-20 Volume:352 Page:1723-1727
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Cuscunà M.,Stracci G.,Bonfiglietti A.,di Gaspare A.,Maiolo L.,Pecora A.,Mariucci L.,Fortunato G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Polycrystalline silicon thin film transistors

2. K. Suzuki, M. Tada, Y. Yamazi, Y. Ishizuka, in: Proceedings of AM-LCD 98 Conference, Tokyo, 9–10 July 1998, p. 5.

3. Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display

4. Control and analysis of leakage currents in poly-Si thin-film transistors

5. Floating body effects in polysilicon thin-film transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon;Solid-State Electronics;2016-12

2. Theoretical determination of the impact of channel morphology and quantum size effects on the surface potential of nanocrystalline silicon thin film transistors;Materials Science in Semiconductor Processing;2014-08

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