Successive segregation in laser-crystallized poly-SiGe thin films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Über Zweistoffsysteme mit Germanium. I. Germanium/Aluminium, Germanium/Zinn und Germanium/Silicium
2. Thermoelectric properties of Si1−xGex(x⩽0.10) with alloy and dopant segregations
3. Synthesis of Si–Ge Alloy by Rapid Cooling in Short-Duration Microgravity
4. Germanium partitioning in silicon during rapid solidification
5. Continuous growth model for interface motion during alloy solidification
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1. Non-isothermal phase-field simulations of laser-written in-plane SiGe heterostructures for photonic applications;Communications Physics;2021-06-11
2. Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems;Advanced Photonics Research;2021-05-20
3. Laser-Driven Phase Segregation and Tailoring of Compositionally Graded Microstructures in Si–Ge Nanoscale Thin Films;ACS Applied Materials & Interfaces;2020-02-03
4. Raman Spectroscopy;Spectroscopic Analysis of Optoelectronic Semiconductors;2016
5. Growth of poly-crystalline silicon–germanium on silicon by aluminum-induced crystallization;Thin Solid Films;2012-09
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