Ion milling-induced ESD damage during MR head fabrication-Reference-Cited by-同舟云学术

Ion milling-induced ESD damage during MR head fabrication

Published:1999-10 Issue:4 Volume:47 Page:291-304
ISSN:0304-3886
Container-title:Journal of Electrostatics
language:en
Short-container-title:Journal of Electrostatics

Author:

Olson David H

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Biotechnology,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Zap! another MR head bites the dust;Wallash;Data Storage,1998

2. C.F. Lam, E. Salhi, S. Chim, Characterization of ESD damaged magnetoresistive recording heads, 1997 EOS/ESD Symposium Proceedings, pp. 386–397.

3. A. Wallash, D. Smith, Electromagnetic interference (EMI) damage to giant magnetoresistive (GMR) recording heads, 1998 EOS/ESD Symposium Proceedings, pp. 368–374.

4. T. Cheung, “Direct charging” charge device model testing of magnetoresistive recording heads, 1997 EOS/ESD Symposium Proceedings, pp. 398–404.

5. Sample charging of insulators with rough surfaced during Auger electron spectroscopy analysis;Park;J. Vac. Sci. Technol. A,1997

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. What is Electrical Overstress? - Analysis and Conclusions;Microelectronics Reliability;2015-05

3. Wafer charging in process equipment and its relationship to GMR heads charging damage;IEEE Transactions on Electronics Packaging Manufacturing;2001-04

4. Wafer charging in process equipment and its relationship to GMR heads charging damage;Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)