Author:
Mergens Markus P.J,Wilkening Wolfgang,Kiesewetter Gerhard,Mettler Stephan,Wolf Heinrich,Hieber Jürgen,Fichtner Wolfgang
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Biotechnology,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. M. Mergens, W. Wilkening, S. Mettler, H. Wolf, W. Fichtner, Modular approach of a high current MOS compact model for circuit-level ESD simulation including transient gate-coupling behavior, Proceedings of the International Reliability Physics Symposium, San Diego, 1999, pp. 167–178.
2. H. Gieser, P. Egger, Influence of tester parasitics on charged device model failure threshold, Proceedings of the 16th EOS/ESD Symposium, 1994, pp. 69–84.
3. H. Gieser, M. Haunschild, Very-fast transmission line pulsing of integrated structures and the charged device model, Proceedings of the 18th EOS/ESD Symposium, 1996, pp. 85–94.
4. H. Wolf, H. Gieser, Analyzing the switching behavior of ESD protection transistors by VFTLP, Proceedings of the 21th EOS/ESD Symposium, Orlando, USA, 1999, pp. 36–44.
5. C. Russ, K. Verhaege, K. Bock, P.J. Roussel, G. Groeseneken, H.E. Maes, A compact model for the grounded-gate NMOS behaviour under CDM ESD stress, Proceedings of the 18th EOS/ESD Symposium, 1996, pp. 302–315.
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