Potential energy threshold of surface erosion on GaN by impact of slow highly charged heavy ions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference27 articles.
1. GaN: Processing, defects, and devices
2. Ion implantation into GaN
3. Reactive ion etching of via holes for GaAs high electron mobility transistors and monolithic microwave integrated circuits using Cl2/BCl3/Ar gas mixtures
4. Dry etching of via connections for GaAs monolithic microwave integrated circuits fabrication
5. Via hole process for GaAs monolithic microwave integrated circuit using two-step dry etching
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1. Degradation mechanisms of optoelectric properties of GaN via highly-charged 209Bi33+ ions irradiation;Applied Surface Science;2018-05
2. Damage produced on GaN surface by highly charged Kr q+ irradiation;Nuclear Science and Techniques;2017-11-16
3. Response of GaN to energetic ion irradiation: conditions for ion track formation;Journal of Physics D: Applied Physics;2015-07-13
4. The irradiation effects of Gd2Hf2O7 and Gd2Ti2O7;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-09
5. PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-12
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