Polychromatic angle resolved IBIC analysis of silicon power diodes-Reference-Cited by-同舟云学术

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Polychromatic angle resolved IBIC analysis of silicon power diodes

Published:2021-02 Issue: Volume:488 Page:50-63
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Pezzarossa M.,Cepparrone E.,Cosic D.,Jakšić M.,Provatas G.,Vićentijević M.,Vittone E.

Funder

Instituto Nazionale di Fisica Nucleare

Horizon 2020 Framework Programme

Università degli Studi di Torino

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference31 articles.

1. Power Electronics Enabling Efficient Energy Usage: Energy Savings Potential and Technological Challenges;Popovic-Gerber;IEEE Trans. Power Electron.,2012

2. Fundamental of power semiconductor devices;Baliga,2019

3. Reverse recovery processes in silicon power rectifiers;Benda;Proc. IEEE,1967

4. Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers;Baliga;IEEE Trans. Electron Devices,1977

5. Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: a critique of conceptual development, state of the art and applications;Khanna;Prog. Quantum Electron.,2005

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectrometric performance of SiC radiation detectors at high temperature;Radiation Physics and Chemistry;2024-01

2. Ion Microbeam Studies of Charge Transport in Semiconductor Radiation Detectors With Three-Dimensional Structures: An Example of LGAD;Frontiers in Physics;2022-05-13

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