A new method of making ohmic contacts to p-GaN-Reference-Cited by-同舟云学术

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A new method of making ohmic contacts to p-GaN

Published:2016-12 Issue: Volume:388 Page:35-40
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hernández-Gutierrez C.A.,Kudriavtsev Yu.,Mota Esteban,Hernández A.G.,Escobosa-Echavarría A.,Sánchez-Resendiz V.,Casallas-Moreno Y.L.,López-López M.

Funder

Consejo Nacional de Ciencia y Tecnología

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference28 articles.

1. The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN;Li;J. Appl. Phys.,2014

2. Low resistance Pd/Au ohmic contacts to p -type GaN using surface treatment;Kim;Appl. Phys. Lett.,1998

3. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films;Ho;J. Appl. Phys.,1999

4. Low-resistance ohmic contacts to p-type GaN;Li;Appl. Phys. Lett.,2000

5. Ohmic contact technology in III nitrides using polarization effects of cap layers;Gessmann;J. Appl. Phys.,2002

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