Alignment of grain orientation in polycrystalline-SiO2 films induced by high-energy heavy ions

Author:

Shinde N.S.,Matsunami N.,Shimura T.,Sataka M.,Okayasu S.,Kato T.,Tazawa M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Sputtering and structural modifications induced in silicon dioxide (SiO2) thin films under (10–40 MeV) Auq+ heavy ion irradiation;Surface and Interface Analysis;2023-09-18

2. Modification of SiO2, ZnO, Fe2O3 and TiN Films by Electronic Excitation under High Energy Ion Impact;Quantum Beam Science;2021-10-27

3. Electronic sputtering of SiC and KBr by high energy ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-09

4. Modifications of AlN thin films by ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04

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