Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures-Reference-Cited by-同舟云学术

Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

Published:2004-06 Issue: Volume:218 Page:355-361
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Fink D.,Petrov A.V.,Hoppe K.,Fahrner W.R.,Papaleo R.M.,Berdinsky A.S.,Chandra A.,Chemseddine A.,Zrineh A.,Biswas A.,Faupel F.,Chadderton L.T.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

2. Ion Tracks and Microtechnology;Spohr,1990

3. Ion Irradiation of Polymers: Fundamentals and Applications,2003

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