Effects of substrate temperature during implantation on the mechanical properties of ion-implanted silicon-Reference-Cited by-同舟云学术

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Effects of substrate temperature during implantation on the mechanical properties of ion-implanted silicon

Published:2004-06 Issue:4 Volume:217 Page:598-602
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Wang Q.,Ishikawa H.,Ogiso H.,Nakano S.,Akedo J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Ion implantation of semiconductors

2. Increasing the fracture toughness of silicon by ion implantation

3. Ion Implantation in Metals

4. Changing the surface mechanical properties of silicon and α-Al2O3 by ion implantation

5. Fracture Toughness Determinations by Indentation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoindentation on single-crystal Si modified by 100keV Cr+ implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04

2. Ion Implantation Induced Martensite Nucleation in SUS301 Steel;Journal of the Japan Institute of Metals;2008

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