Laser irradiation of ion beam synthesized Ge nanocrystals in SiC-Reference-Cited by-同舟云学术

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Laser irradiation of ion beam synthesized Ge nanocrystals in SiC

Published:2004-06 Issue: Volume:218 Page:337-342
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hedler A.,Urban S.,Kups T.,Kaiser U.,Wesch W.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials

2. Photoluminescence properties of surface-oxidized Ge nanocrystals: Surface localization of excitons

3. Quantum confinement of edge states in Si crystallites

4. Optical gain in silicon nanocrystals

5. Quantum size effects on photoluminescence in ultrafine Si particles

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion of fission products and radiation damage in SiC;Journal of Physics D: Applied Physics;2013-10-28

2. Radiation-Assisted Synthesis of Composites, Materials, Compounds, and Nanostructures;Wiley Encyclopedia of Composites;2012-07-20

3. Ge adsorption on SiC(0001): An ab initio study;Surface Science;2006-03

4. Structural properties of Ge nanocrystals embedded in sapphire;Journal of Applied Physics;2006

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