Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. A. Ohata, M. Cassé, S. Cristoloveanu, T. Poiroux, Mobility issues in ultra-thin SOI MOSFETs: thicknessvariations, GIFBE and coupling effects, in: 34th European Solid-State Device Research Conference (ESS-DERC’04), Leuven, Belgium, 2004, p. 109.
2. Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K
3. Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor
4. Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs
5. Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicon-on-Insulator Structures Produced by Ion-Beam Synthesis and Hydrogen Transfer;Advances in Semiconductor Nanostructures;2017
2. Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing;Solid State Communications;2016-12
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