Post deposition annealing of Hf aluminate films on Si investigated by ion backscattering and nuclear reaction analyses
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference15 articles.
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3. Atomic transport and integrity of Al2O3(2.0nm)∕HfO2(2.5nm) gate stacks on Si
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1. Medium energy ion scattering for the high depth resolution characterisation of high-k dielectric layers of nanometer thickness;Applied Surface Science;2013-09
2. High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high-k layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01
3. High Depth Resolution Depth Profile Analysis of Ultra Thin High-κ Hf Based Films using MEIS Compared with XTEM, XRF, SE and XPS;ECS Transactions;2009-09-25
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