Exploring the sheet resistance variation with various beam current densities in low-energy ion implantation-Reference-Cited by-同舟云学术

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Exploring the sheet resistance variation with various beam current densities in low-energy ion implantation

Published:2006-03 Issue:2 Volume:244 Page:338-342
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Lai Yi-Sheng,Chen J.S.,Sun H.L.,Chen Z.B.,Tien C.T.,Yeh S.Y.,Chen C.W.,Lee F.S.,Ho Y.S.,Hsu P.Y.,Wu H.H.,Wang J.H.,Yang C.M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. M.A. Graf, B. Vanderberg, V. Benveniste, D.R. Tieger, J. Ye, in: Proceedings of the 14th International Conference on Ion Implantation Technology, 2002, p. 359.

2. The effect of dose rate on interstitial release from the end-of-range implant damage region in silicon

3. Ion-beam-induced amorphization and recrystallization in silicon

4. Process modeling for future technologies

5. Ion implantation damage model for B, BF[sub 2], As, P, and Si in silicon

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