Tungsten contamination in ion implantation-Reference-Cited by-同舟云学术

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Tungsten contamination in ion implantation

Published:2016-06 Issue: Volume:377 Page:99-104
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Polignano M.L.,Barbarossa F.,Galbiati A.,Magni D.,Mica I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Contamination problems in ion implantation;Ryssel,1992

2. Characterization of boron and phosphorus surface contamination in high current ion implantation;Bernstein,2002

3. Investigation of metal contamination by photocurrent measurements: validation and application to ion implantation processes;Polignano,1995

4. Metal contamination reduction in the evolution of ion implantation technology;Polignano,2000

5. Contamination by slow diffusers in ion implantation processes: the examples of molybdenum and tungsten;Polignano;Nucl. Instr. Meth. B,2015

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defects induced by solid state reactions at the tungsten-silicon carbide interface;Journal of Applied Physics;2018-04-28

2. Electrical Properties of Metals in Si and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018

3. Detection and reduction of tungsten contamination in ion implantation processes;physica status solidi (c);2016-07-11

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