A new spectrometer for Rutherford backscattering spectrometry

Author:

Ichihara Chikara,Kobayashi Akira,Inoue Ken-ichi,Kimura Kenji

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference4 articles.

1. Fundamentals of Surface and Thin Film Analysis;Feldman,1986

2. Transient effects in SIMS analysis for different angles of incidence of an O+2 primary ion beam

3. Matrix effects in SIMS: Ion yield enhancement in copper sulfide films on copper and copper alloys

4. Applications of Accelerators in Research and Industry;Kimura,1999

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2. Depth profile analysis of helium in silicon with high-resolution elastic recoil detection analysis;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05

3. Theoretical analysis of mass and depth resolutions of cyclotron Rutherford backscattering spectrometry system;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-12

4. Erratum to “A new spectrometer for Rutherford backscattering spectrometry” [Nucl. Instr. and Meth. B 229 (2005) 527];Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-09

5. Advanced ion energy loss models: Applications to subnanometric resolution elemental depth profiling;Surface Science;2007-12

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