Measurement of the transient response of semiconductor devices to ionizing radiation-Reference-Cited by-同舟云学术

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Measurement of the transient response of semiconductor devices to ionizing radiation

Published:2007-08 Issue:1-2 Volume:261 Page:1137-1141
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

McMorrow Dale,Boos J. Brad,Melinger Joseph S.,Ferlet-Cavrois Veronique,Paillet Philippe,Duhamel Olivier,Baggio Jacques

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Ion induced charge collection in GaAs MESFETs

2. Ion induced charge collection in GaAs MESFETs and its effect on SEU vulnerability

3. A comparison of charge collection effects between GaAs MESFETs and III-V HFETs

4. High speed response of a GaAs metal‐semiconductor field‐effect transistor to electron‐beam excitation

5. Gate Charge Collection and Induced Drain Current in GaAs FETs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of Pulsed-Laser-Induced Testing in Microelectronic Devices;IEEE Transactions on Nuclear Science;2021-10

2. Charge cluster distribution in nanosites traversed by a single ionizing particle – An experimental approach;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-11

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