Stopping power measurements of He ions in Si and SiC by time-of-flight spectrometry-Reference-Cited by-同舟云学术

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Stopping power measurements of He ions in Si and SiC by time-of-flight spectrometry

Published:2007-08 Issue:1-2 Volume:261 Page:1180-1183
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zhang Y.,Jensen J.,Possnert G.,Grove D.A.,Bae In-Tae,Weber W.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference28 articles.

1. International Commission on Radiation Units and Measurements (ICRU) Report 49, Bethesda, MD, 1993.

2. International Commission on Radiation Units and Measurements (ICRU) Report 73, Oxford, 2005.

4. RBS/ERD simulation problems: Stopping powers, nuclear reactions and detector resolution

5. Electronic stopping of swift lithium and carbon ions

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Energy deposition by H and He ions at keV energies in self-supporting, single crystalline SiC foils;Radiation Physics and Chemistry;2022-05

2. First-principles simulation of the electronic stopping power of He ions in Al at finite temperature;Physical Review A;2022-03-10

3. Electronic stopping for protons andαparticles from first-principles electron dynamics: The case of silicon carbide;Physical Review B;2016-09-06

4. Stopping power measurements with the Time-of-Flight (ToF) technique;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-01

5. Theoretical study of the channeling effect in the electronic stopping power of silicon carbide nanocrystal for low-energy protons and helium ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-01

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