High fluence swift heavy ion structure modification of the SiO 2 /Si interface and gate insulator in 65 nm MOSFETs-Reference-Cited by-同舟云学术

High fluence swift heavy ion structure modification of the SiO 2 /Si interface and gate insulator in 65 nm MOSFETs

Published:2017-04 Issue: Volume:396 Page:56-60
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ma Yao,Gao Bo,Gong Min,Willis Maureen,Yang Zhimei,Guan Mingyue,Li Yun

Funder

National Natural Science Foundation of China

Heavy Ion Research Facility in Lanzhou

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

4. iO2-Si under swift heavy ion irradiation: a comparison between normal and grazing incidence features;Carvalho,2008

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