Ion implantation in advanced planar and vertical devices-Reference-Cited by-同舟云学术

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Ion implantation in advanced planar and vertical devices

Published:2005-08 Issue:1-2 Volume:237 Page:1-5
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Gossmann Hans-Joachim L.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. S.I. Association, SIA, San Jose, CA, 2003. Available from:< http://public.itrs.net/Files/2003ITRS/Home2003.htm>.

2. Impact of lateral source/drain abruptness on device performance

3. R.S. Shenoy, K.C. Saraswat, in: Abstracts of the 2003 Silicon Nanoelectronics Workshop, 2003, p. 8.

4. Proc. IEDM-2001;Boeuf,2001

5. Proc. IEDM-2003;Gusmeroli,2003

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion implantation effects of negative oxygen on copper nanowires;Journal of Materials Science: Materials in Electronics;2017-03-27

2. In situ beam angle measurement in a multi-wafer high current ion implanter;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08

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