Reduction in contact resistance and structural evaluation of Al/Ti electrodes on Si-implanted GaN
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Ion implantation in semiconductors—Part II: Damage production and annealing
3. Ion implantation into GaN
4. Very low resistance multilayer Ohmic contact to n‐GaN
5. Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Towards the understanding of the Ti/Al ratio role in solid-state reaction for ohmic contacts on n-GaN;Materials Science in Semiconductor Processing;2023-05
2. Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts;IEEE Transactions on Electron Devices;2022-10
3. Dynamics of the transition resistance of Al–(Ti, Ni, Mo)–Si type contacts under conditions of non-stationary electrical loads;Journal of Applied Physics;2022-02-28
4. A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure;Micromachines;2019-12-05
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