The surface charge effect by using boron ions implantation in p-channel MOSFETs fabricated-Reference-Cited by-同舟云学术

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The surface charge effect by using boron ions implantation in p-channel MOSFETs fabricated

Published:2008-09 Issue:18 Volume:266 Page:4037-4041
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Chen Lu-Chang,Wu Meng-Chyi

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. M.A. Foad, J.G. England, D.G. Armour, S. Moffatt, in: International Conference on Ion Implantation Technology, Austin, Texas, 1996, p. 603.

2. J.A. van der Berg, G. Wostenholm, M. Geryk, D.G. Armour, C.E. Cook, in: International Conference on Ion Implantation Technology, Alpbach, Austria, 2000, p. 17.

3. J.F. Ziegler, M.E. Mack, in: Handbook of Ion Implantation Technology, North-Holland, 1992, p. 599.

4. P. Splinter, J. Chen, S. Barusso, in: International Conference on Ion Implantation Technology, Kyoto, Japan, 1998, p. 365.

5. Localized charge injection in SiO2 films containing silicon nanocrystals

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