Ion-bombardment induced light emission from Si(100) surfaces under continuous germane exposures-Reference-Cited by-同舟云学术

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Ion-bombardment induced light emission from Si(100) surfaces under continuous germane exposures

Published:2005-08 Issue:3-4 Volume:237 Page:485-496
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Rajasekar P.,Lennart Alexis,Materer Nicholas F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference55 articles.

1. The interaction of silanes with silicon single crystal surfaces: microscopic processes and structures

2. Principles of plasma discharges and materials processing;Lieberman,1994

3. Optimization of High Efficiency Amorphous Silicon Alloy based Triple-Junction Modules

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Survival of the excited Mg atoms sputtered from Mg, MgO, MgF2 and oxygen-covered Mg surface;Applied Surface Science;2008-12

2. Light emission from ion-bombarded Ge(100) surfaces under continuous germane and silane exposures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-04

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