Characteristics of fast ions from laser-induced plasma and their applicability to shallow junction doping-Reference-Cited by-同舟云学术

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Characteristics of fast ions from laser-induced plasma and their applicability to shallow junction doping

Published:2013-11 Issue: Volume:314 Page:162-165
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Sekioka Tsuguhisa,Amano Sho,Inoue Tomoaki,Mochizuki Takayasu

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Cramming More Components Onto Integrated Circuits

2. International Technology Roadmap for Semiconductors (ITRS), http://www.itrs.net/.

3. Comprehensive Semiconductor Science and Technology;Seebauer,2011

4. Implantation characteristics by boron cluster ion implantation

5. Ultralow-Energy Boron-Ion Implantation of Silicon

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