Modification of structure and optical band-gap of nc-Si:H films with 30 and 196MeV Kr-ions-Reference-Cited by-同舟云学术

Modification of structure and optical band-gap of nc-Si:H films with 30 and 196MeV Kr-ions

Published:2013-07 Issue: Volume:307 Page:419-423
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Zhu Yabin,Wang Zhiguang,Yao Cunfeng,Sun Jianrong,Shen Tielong,Wei Kongfang,Pang Lilong,Cui Minghuan,Li Yuanfei,Wang Ji,Zhu Huiping,Song Peng,Wang Dong

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. Influence of the deposition parameters on the microstructure and opto-electrical properties of hydrogenated nanocrystalline silicon films by HW-CVD

2. Fabrication of low defect density nanocrystalline silicon absorber layer and its application in thin-film solar cell

3. Effect of keV ion irradiation on mechanical properties of hydrogenated amorphous silicon

4. Separating the effects of hydrogen and bond-angle variation on the amorphous-silicon band gap

5. Defect production in silicon irradiated with 750 MeV Ar ions

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