Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer
2. Defect formation in the solid phase epitaxial growth of GaAs films on Si (001) substrate
3. 1540 nm light emission from Er-doped amorphous GaAsN films
4. Hydrogenated amorphous and microcrystalline GaAs films prepared by radio-frequency magnetron sputtering
5. A 2.3 to 25 keV XAS beamline at LNLS
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