The effect of thermal treatments on the local geometry around indium in In and In+C high dose implanted Si-Reference-Cited by-同舟云学术

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The effect of thermal treatments on the local geometry around indium in In and In+C high dose implanted Si

Published:2006-12 Issue:1-2 Volume:253 Page:59-62
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

d’Acapito F.,Shimizu Y.,Scalese S.,Italia M.,Alippi P.,Grasso S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference23 articles.

1. Investigation on indium diffusion in silicon

2. Spectroscopic Investigation of Group-III Acceptor States in Silicon

3. A new acceptor level in indium‐doped silicon

4. Nature of the 0.111‐eV acceptor level in indium‐doped silicon

5. Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reflection XAFS;XAFS Techniques for Catalysts, Nanomaterials, and Surfaces;2016-10-20

2. Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping;Materials Research Letters;2016-04-21

3. Enhanced electrical activation in In-implanted Ge by C co-doping;Applied Physics Letters;2015-11-23

4. Structural and electrical properties of In-implanted Ge;Journal of Applied Physics;2015-10-28

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